View 2SK3797_1198816.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SK3797
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI)
2SK3797
Switching Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 13 52 50 1033 13 5.0 150 -55~150 A W mJ A mJ C C
1: Gate 2: Drain 3: Source
Unit V V V
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-67 2-10U1B
Weight: 1.7 g (typ.)
Thermal Characteristics
Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.5 62.5 Unit
2
C/W C/W
Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: VDD = 90 V, Tch = 25C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
3 1
1
2005-01-24
2SK3797
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 13 A - Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6.5 A VDS = 10 V, ID = 7.0 A Min Typ. Max Unit
30
600 2.0

0.32 7.5 3100 20 270 60 110 50 215 62 40 22
10
100
A
V
A
V V
4.0 0.43
2.1
S
Yfs
Ciss Crss Coss tr ton

VDS = 25 V, VGS = 0 V, f = 1 MHz
pF
10 V VGS 0V 50 ID = 6.5 A VOUT RL = 30 VDD 200 V -

ns

nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition Min Typ. Max 13 52 Unit A A V ns

IDR = 13 A, VGS = 0 V IDR = 13 A, VGS = 0 V, dIDR/dt = 100 A/s

1050 15
-1.7
C
Marking
K3797
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2005-01-24
2SK3797
ID - VDS
14 10V 12 10 8 5.8V 6 4 2 0 0 5.4V 5V VGS = 4V 2 4 6 8 10 0 0 5 COMMON SOURCE Tc = 25C PULSE TEST 6.2V 30 10V
ID - VDS
8V COMMON SOURCE Tc = 25C PULSE TEST
DRAIN CURRENT ID (A)
8V 6.6V
DRAIN CURRENT ID (A)
7V
25
7V
20 6.6V 15 6.2V 10 5.8V 5 VGS = 4 V 10 15 20 25 30 5.4V 5V
DRAIN-SOURCE VOLTAGE
VDS
(V)
DRAIN-SOURCE VOLTAGE
VDS
(V)
ID - VGS
30 COMMON SOURCE 10
VDS - VGS
COMMON SOURCE
DRAIN CURRENT ID (A)
25
DRAIN-SOURCE VOLTAGE VDS (V)
VDS = 20 V PULSE TEST
Tc = 25 8 PULSE TEST
20
6 ID = 13 A 4
15 Tc = 100C 10 Tc = 25C
5 Tc = -55C 0 0 2 4 6 8 10
2
ID = 6.5 A ID = 3 A
0 0
4
8
12
16
20
GATE-SOURCE VOLTAGE
VGS
(V)
GATE-SOURCE VOLTAGE
VGS
(V)
Yfs - ID FORWARD TRANSIENT ADMITTANCE Yfs (S)
100 COMMON SOURCE VDS = 20 V PULSE TEST Tc = -55C 10 100 25 1
RDS (ON) - ID
DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
COMMON SOURCE Tc = 25C PULSE TEST
VGS = 10 V 0.3 VGS = 15 V
0.1 0.1
10
100
0.1 0.1
1
10
100
DRAIN CURRENT ID
(A)
DRAIN CURRENT ID
(A)
3
2005-01-24
2SK3797
RDS (ON) - Tc
1 100 COMMON SOURCE 0.8
IDR - VDS
COMMON SOURCE Tc = 25C PULSE TEST 10
DRAIN-SOURCE ON RESISTANCE RDS (ON) ( )
0.6
ID = 13A 6.5
0.4
3
DRAIN REVERSE CURRENT IDR (A)
VGS = 10 V PULSE TEST
1
10 5 3 1 VGS = 0, -1 V
0.2
0 -80
-40
0
40
80
120
160
0.1 0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
CASE TEMPERATURE
Tc
(C)
DRAIN-SOURCE VOLTAGE
VDS
(V)
Capacitance - VDS
10000 Ciss 5
Vth - Tc
GATE THRESHOLD VOLTAGE Vth (V)
(pF)
4
CAPACITANCE C
1000
3
Coss 100 COMMON SOURCE VGS = 0 V f = 1 MHz 10 Tc = 25C 0.1 1 10 100 Crss
2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 -80 -40 0 40 80 120 160
DRAIN-SOURCE VOLTAGE
VDS
(V)
CASE TEMPERATURE
Tc
(C)
PD - Tc
80 500
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400
VDS VDD = 100 V
16
60
300
12 200V
40
200 VGS 100
400V COMMON SOURCE ID = 13 A Tc = 25C PULSE TEST
8
20
4
0 0
40
80
120
160
0 0
20
40
60
80
0 100
CASE TEMPERATURE
Tc
(C)
TOTAL GATE CHARGE
Qg
(nC)
4
2005-01-24
GATE-SOURCE VOLTAGE VGS (V)
20
DRAIN POWER DISSIPATION PD (W)
DRAIN-SOURCE VOLTAGE VDS (V)
2SK3797
rth - tw
NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
10
1
Duty=0.5 0.2
0.1
0.1 0.05 0.02 PDM t
0.01
0.01
SINGLE PULSE
T Duty = t/T Rth (ch-c) = 2.5C/W
0.001 10
100
1
10
100
1
10
PULSE WIDTH
tw
(s)
100
SAFE OPERATING AREA
ID max (PULSED) * 100 s * ID max (CONTINOUS) 1200
EAS - Tch
AVALANCHE ENERGY EAS (mJ)
1000
DRAIN CURRENT ID (A)
10 1 ms *
800
600
1
DC OPERATION Tc = 25C
400
200
*SINGLE NONREPETITIVE 0.1 PULSE Tc = 25C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.01 1 VDSS max 100 1000
0 25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL) Tch (C)
BVDSS IAR VDD TEST CIRCUIT RG = 25 VDD = 90 V, L = 10.7mH VDS WAVEFORM
10
15 V
DRAIN-SOURCE VOLTAGE VDS
(V)
-15 V
AS =
1 B VDSS L I2 B 2 - VDD VDSS
5
2005-01-24
2SK3797
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
6
2005-01-24

▲Up To Search▲

Price & Availability of 2SK3797

	To Download 2SK3797 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .